FinFETs are next generation transistors, which utilize multi-gate structure.
In FinFET as the gate electrode wraps the channel from all three sides to give better electrostatic control of the channel.FinFETs have the following advantages over bulk MOSFETs: · Power consumption- Very less leakage and parasitic current leading to less static power.· Operating Voltage- FinFETs operate at a lower voltage as a result of their lower threshold voltage. · No Short channel effect- Excellent electrostatic control of the channel 15.· No Body effects in FinFETs when compared to planar CMOS.· The realization of self-aligned double-gate devices in FinFET with a conventional CMOS process is attractive 7.
We Will Write a Custom Essay Specifically
For You For Only $13.90/page!
E. Manufacturing Challenges of FinFET TechnologyTransition from planar structure to FinFET involves many manufacturing challenges. Especially with respect to Pattering and formation of the fins demands a tighter control on manufacturing and processing steps 10.
Below are the some of the manufacturing challenges in realizing FinFETs. · Fin ShapeFirst Finfet-based high performance complex logic product was Intel’s 22nm node microprocessor. It has been built with finfet sidewalls sloping at about 8 degrees from vertical. Such shape has several practical advantages for manufacturability of this technology 18:- Fins with lower aspect ratio (height : width) are more mechanically sturdy thus less vulnerable to damage during manufacturing process;- Sloping sidewalls assure better fill of trenches between fins with fin isolation dielectric;- Etching gate spacer off fin sidewalls is easier than for vertical fins;- Gate etch, which in finfets requires much more overetch, is easier;- Doping of source and drain extensions by implantation is easier as sloped sidewalls are more suitable for dopant placement by vertical or low angle tilt implants.